Method for integrating a light emitting device

ABSTRACT

Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

RELATED APPLICATION(S)

This application is a continuation of co-pending U.S. patent applicationSer. No. 16/284,125, filed Feb. 25, 2019, which is a continuationapplication of U.S. patent application Ser. No. 15/850,862, filed onDec. 21, 2017, now U.S. Pat. No. 10,256,221, which is a continuation ofU.S. patent application Ser. No. 15/405,060, filed Jan. 12, 2017, nowU.S. Pat. No. 9,876,000 which is a continuation of U.S. patentapplication Ser. No. 14/976,541, filed Dec. 21, 2015, now U.S. Pat. No.9,570,427 which is a continuation of U.S. patent application Ser. No.14/603,960, filed Jan. 23, 2015, now U.S. Pat. No. 9,240,397 which is acontinuation of U.S. patent application Ser. No. 13/919,965, filed onJun. 17, 2013, now U.S. Pat. No. 8,987,765, which is incorporated hereinby reference.

BACKGROUND Field

The present invention relates to light emitting devices. Moreparticularly embodiments of the present invention relate to methods andstructures for integrating micro LED devices into a light emittingdevice.

Background Information

As light emitting diode (LED) technology continues to advance,semiconductor-based LEDs are increasingly found in lighting and displayapplications. For example, semiconductor-based LEDs are found in largearea outdoor displays, indoor and outdoor lighting, and backlight unitsin liquid crystal display (LCD) display systems. In order to control thedirection of light emission, LED package structures may include an LEDchip mounted within a reflective cavity.

In one implementation described in U.S. Pat. No. 7,482,696 an LED chipis flip chip bonded to pads on conductive-reflective films within acavity. In another implementation described in European Publication No.EP 1780798 A1 an LED chip is mounted within a cavity including areflector. A filler material is then applied over the LED chip andreflector to protect the LED chip and reflector against moisture andcontaminants.

SUMMARY OF THE INVENTION

Light emitting devices and methods of integrating micro LED devices intolight emitting device are described. In an embodiment a light emittingdevice includes a reflective bank structure within a bank layer, and aconductive line atop the bank layer and elevated above the reflectivebank structure. A micro LED device is within the reflective bankstructure and a passivation layer is over the bank layer and laterallyaround the micro LED device within the reflective bank structure. Aportion of the micro LED device and the conductive line atop the banklayer protrude above a top surface of the passivation layer. Thepassivation layer may include a substantially flat top surface acrossthe entire area that the passivation layer covers. The passivation layermay be formed of a variety of materials, such as a thermoset material,for example acrylic. The bank layer may be formed over a thin filmtransistor substrate in an embodiment. For example, the light emittingdevice may be a display panel in a display system. The light emittingdevice may also be a light source in a lighting system. A plurality ofreflective bank structures can be formed in the bank layer, and acorresponding plurality of micro LED devices can be within the pluralityof reflective bank structures. In this configuration, the passivationlayer is over the bank layer and laterally around the correspondingplurality of micro LED devices within the plurality of reflective bankstructures, and a portion of each micro LED device and the conductiveline atop the bank layer protrude from the top surface of thepassivation layer.

In an embodiment, a method of integrating a light emitting deviceincludes picking up a micro LED device from a carrier substrate with atransfer head, placing the micro LED device within a reflective bankstructure formed in a bank layer, and releasing the micro LED devicefrom the transfer head. A passivation layer is then applied over thebank layer and laterally around the micro LED device within thereflective bank structure. A conductive line atop the bank layer iselevated above the reflective bank structure. The passivation layer ishardened, for example, by UV curing. The passivation layer is etched sothat a top surface of the micro LED device and a top surface of theconductive line are not covered by the passivation layer, and a portionof the micro LED device and the conductive line protrude above a topsurface of the passivation layer after etching the passivation layer. Inan embodiment, the portion of the micro LED device and the conductiveline protrude above a top surface of the passivation layer prior toetching the passivation layer, and residues of the passivation layercover a top surface of the micro LED device or conductive line prior toetching. In an embodiment, etching the passivation layer removes theresidues. In some embodiments, the passivation layer is leveled after orwhile applying the passivation layer to provide a substantially flat topsurface of the passivation layer across the entire area that thepassivation layer covers. Leveling can be accomplished by a variety ofmethods including passing a roller, squeegee, or blade across thepassivation layer. In an embodiment, applying the passivation layerincludes slit coating or roller coating.

A plurality of micro LED devices can be picked up from the carriersubstrate with an array of transfer heads, placed within a correspondingplurality of reflective bank structures formed in the bank layer, andreleased from the transfer heads. The passivation layer can be appliedover the bank layer and laterally around the plurality of micro LEDdevices within the plurality of reflective bank structures. Thepassivation layer can then be etched such that a top surface of eachmicro LED device and the top surface of the conductive line are notcovered by the passivation layer, and a portion of each micro LED deviceand the conductive line protrude above the top surface of thepassivation layer after etching the passivation layer.

In an embodiment, a method of integrating a light emitting deviceincludes applying a passivation layer over a bank layer and a reflectivebank structure within the bank layer, where a conductive line atop thebank layer is elevated above the reflective bank structure. A micro LEDdevice is picked up from a carrier substrate with a transfer head,placed within the reflective bank structure by punching the micro LEDdevice through the passivation layer, and released from the transferhead. The passivation layer is hardened, for example by UV curing. Thepassivation layer is etched so that a top surface of the micro LEDdevice and a top surface of the conductive line are not covered by thepassivation layer, and a portion of the micro LED device and theconductive line protrude above the top surface of the passivation layerafter etching the passivation layer. In an embodiment, the portion ofthe micro LED device and the conductive line protrude above the topsurface of the passivation layer prior to etching the passivation layer,and residues of the passivation layer cover the top surface of the microLED device or conductive line prior to etching. In an embodiment,etching the passivation layer removes the residues. In some embodiments,the passivation layer is leveled after or while applying the passivationlayer to provide a substantially flat top surface of the passivationlayer across the entire area that the passivation layer covers. Levelingcan be accomplished by a variety of methods including passing a roller,squeegee, or blade across the passivation layer. In an embodiment,applying the passivation layer includes slit coating or roller coating.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a top view illustration of an active matrix display panel inaccordance with an embodiment of the invention.

FIG. 1B is a side-view illustration of the active matrix display panelof FIG. 1A taken along lines X-X and Y-Y in accordance with anembodiment of the invention.

FIG. 1C is a side-view illustration of the active matrix display panelof FIG. 1A taken along lines X-X and Y-Y in accordance with anembodiment of the invention.

FIG. 1D is a side-view illustration of the active matrix display panelof FIG. 1A taken along lines X-X and Y-Y in accordance with anembodiment of the invention.

FIGS. 2A-2F illustrated a method of transferring a plurality of microLED devices to a plurality of reflective bank structures in accordancewith an embodiment of the invention.

FIGS. 3A-3F are top view illustrations for a sequence of transferring anarray of micro LED devices with different color emission spectra inaccordance with an embodiment of the invention.

FIG. 4A is a perspective view illustration redundant pair of micro LEDdevices within a reflective bank structure in accordance with anembodiment of the invention.

FIG. 4B is a perspective view illustration redundant pair of micro LEDdevices and repair site within a reflective bank structure in accordancewith an embodiment of the invention.

FIG. 5A is a side-view illustration of the active matrix display panelof FIG. 3F taken along lines X-X and Y-Y after the transfer of a pair ofmicro LED devices to the reflective bank structure in accordance with anembodiment of the invention.

FIG. 5B is a side-view illustration of the active matrix display panelof FIG. 1A taken along lines X-X and Y-Y after the application of apassivation layer over the bank layer in accordance with an embodimentof the invention.

FIG. 5C is a side-view illustration of the active matrix display panelof FIG. 3F taken along lines X-X and Y-Y after the transfer of a pair ofmicro LED devices and application of a passivation layer over the banklayer in accordance with an embodiment of the invention.

FIG. 6A is a schematic illustration of the application and leveling of apassivation layer so that a portion of the micro LED devices andconductive line atop a bank layer protrude above a top surface of thepassivation layer in accordance with an embodiment of the invention.

FIG. 6B is a schematic illustration of the application and leveling of apassivation layer so that a portion of the micro LED devices andconductive line atop a bank layer protrude above a top surface of thepassivation layer in accordance with an embodiment of the invention.

FIG. 6C is a schematic illustration of the application and leveling of apassivation layer above the micro LED devices and conductive line atop abank layer in accordance with an embodiment of the invention.

FIGS. 7A-7B are side-view illustrations of etching passivation layerresidues from the micro LED devices and conductive line atop a banklayer in accordance with an embodiment of the invention.

FIGS. 8A-8B are side-view illustrations of etching a passivation layerso that a portion of the micro LED devices and a conductive line atop abank layer protrude above a top surface of the passivation layer inaccordance with an embodiment of the invention.

FIG. 9 is a side-view illustration of the active matrix display panel ofFIG. 3F taken along lines X-X and Y-Y after the formation of a topelectrode layer in accordance with an embodiment of the invention.

FIG. 10 is a side-view illustration of the active matrix display panelof FIG. 3F taken along lines X-X and Y-Y after the formation of a coverlayer in accordance with an embodiment of the invention.

FIG. 11 is a side-view illustration of the active matrix display panelof FIG. 3F taken along lines X-X and Y-Y without a dam structure inaccordance with an embodiment of the invention.

FIG. 12A is a top view illustration of the active matrix display panelof FIG. 3F taken along lines X-X and Y-Y after the formation of a blackmatrix material between subpixels in accordance with an embodiment ofthe invention.

FIG. 12B is a schematic side view illustration of the application of ablack matrix material before forming a cover plate over the displaypanel substrate in accordance with an embodiment of the invention.

FIG. 12C is a schematic side view illustration of the application of ablack matrix material with a cover plate over the display panelsubstrate in accordance with an embodiment of the invention.

FIG. 13A is a top schematic view illustration of a top electrode layerformed over an array of micro LED devices including a variety ofconfigurations in accordance with an embodiment of the invention.

FIG. 13B is a top schematic view illustration of a plurality of separatetop electrode layers formed over an array of micro LED devices includinga variety of configurations in accordance with an embodiment of theinvention.

FIG. 13C is a top schematic view illustration of a plurality of separatetop electrode layers formed over an array of micro LED devices includinga variety of configurations in accordance with an embodiment of theinvention.

FIG. 14 is a top schematic view illustration of a scribed top electrodelayer in accordance with an embodiment of the invention.

FIG. 15 is a schematic illustration of a display system in accordancewith an embodiment of the invention.

FIG. 16 is a schematic illustration of a lighting system in accordancewith an embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention describe structures and methods ofintegrating a plurality of micro LED devices into a correspondingplurality of reflective bank structures of a light emitting device. Insome embodiments, the micro LED devices are vertical micro LED devices.A plurality of reflective bank structures are formed within a bank layerand a corresponding plurality of micro LED devices are mounted withinthe plurality of reflective bank structures. A passivation layer islaterally around the plurality of micro LED devices within thecorresponding plurality of reflective bank structures such that aportion of each of the micro LED devices and a conductive line atop thebank layer protrude above a top surface of the passivation layer. Theconductive line may be elevated above the reflective bank structures aspart of a dam structure. The passivation layer may electrically insulatebottom electrodes or reflective bank structures connected to the microLED devices from one or more top electrode layers connected to the microLED devices. The passivation layer may additionally electricallyinsulate sidewalls of the vertical micro LED devices containing one ormore quantum well layers from the top or bottom electrode layers. Thepassivation layer may be formed over the reflective bank structures andlaterally around micro LED devices after mounting the micro LED deviceswithin the reflective bank structures, or alternatively the passivationlayer may be formed over the reflective bank structures followed bypunching the micro LED devices through the passivation layer to mountthe micro LED devices within the reflective bank structures. Followingthe transfer of the micro LED devices and application of the passivationlayer, the passivation layer can be etched to ensure the micro LEDdevices and one or more conductive lines are not covered by thepassivation layer. In some embodiments the micro LED devices and one ormore conductive lines protrude above a top surface of the passivationlayer prior to and after etching. In such embodiments, etching may beused to ensure any passivation layer residues are removed from a topsurface of the micro LED devices and one or more conductive lines. Inother embodiments etching reduces the thickness so that the micro LEDdevices and one or more conductive lines protrude above a top surface ofthe passivation layer after etching. One or more top electrode layerscan then be formed to electrically connect the portions of the micro LEDdevices protruding above the top surface of the passivation layer to oneor more conductive lines protruding above the top surface of thepassivation layer.

In one aspect, the integration structures and methods include one ormore passivation layer dam structures in which the conductive lines areraised above the reflective bank structures and the passivation layerthat is formed. The dam structures may be formed of a variety ofmaterials such as an insulating material used to form the bank layer, oralternatively the dam structures can be the conductive lines themselves.In this manner, the passivation layer can be applied over the reflectivebank structure and the conductive lines, and leveled so that the microLED devices and the conductive lines protrude above the top surface ofthe passivation layer.

In another aspect, the one or more dam structures may also function as aleveling reference for setting the reference height of the top surfaceof the passivation layer. In this manner, a leveler such as a roller,squeegee, or blade can follow an applicator of the passivation layermaterial. The elevation of the top surface of the passivation layer canbe adjusted based upon a detected elevation of the dam structures sothat a portion of the micro LED devices and conductive lines protrudeabove a top surface of the passivation layer.

In these manners, the integration structures and methods in accordancewith embodiments of the invention may allow for the passivation andelectrical connection of the micro LED devices with a reduced number ofdeposition and patterning techniques.

The terms “micro” device or “micro” LED structure as used herein mayrefer to the descriptive size of certain devices or structures inaccordance with embodiments of the invention. As used herein, the terms“micro” devices or structures are meant to refer to the scale of 1 to100 μm. For example, each micro LED device may have a maximum width of 1to 100 μm, with smaller micro LED devices consuming less power. In someembodiments, the micro LED devices may have a maximum width of 20 μm, 10μm, or 5 μm. In some embodiments, the micro LED devices have a maximumheight of less than 20 μm, 10 μm, or 5 μm. The incorporation of microLED devices in accordance with embodiments of the invention can be usedto combine the performance, efficiency, and reliability of wafer-basedLED devices with the high yield, low cost, mixed materials of thin filmelectronics, for both lighting and display applications. Exemplary microLED devices which may be utilized with some embodiments of the inventionare described in U.S. Pat. No. 8,426,227, U.S. Publication No.2013/0126081, U.S. patent application Ser. No. 13/458,932, U.S. patentapplication Ser. No. 13/711,554, and U.S. patent application Ser. No.13/749,647. The light emitting devices in accordance with embodiments ofthe invention may be highly efficient at light emission and consume verylittle power (e.g., 250 mW for a 10 inch diagonal display compared to5-10 watts for a 10 inch diagonal LCD or OLED display), enablingreduction of power consumption of an exemplary display or lightingapplication incorporating the micro LED devices.

The terms “spanning”, “over”, “to”, “between” and “on” as used hereinmay refer to a relative position of one layer with respect to otherlayers. One layer “spanning”, “over” or “on” another layer or bonded“to” or in “contact” with another layer may be directly in contact withthe other layer or may have one or more intervening layers. One layer“between” layers may be directly in contact with the layers or may haveone or more intervening layers.

In various embodiments, description is made with reference to figures.However, certain embodiments may be practiced without one or more ofthese specific details, or in combination with other known methods andconfigurations. In the following description, numerous specific detailsare set forth, such as specific configurations, dimensions andprocesses, etc., in order to provide a thorough understanding of thepresent invention. In other instances, well-known semiconductorprocesses and manufacturing techniques have not been described inparticular detail in order to not unnecessarily obscure the presentinvention. Reference throughout this specification to “one embodiment”means that a particular feature, structure, configuration, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the invention. Thus, the appearances ofthe phrase “in one embodiment” in various places throughout thisspecification are not necessarily referring to the same embodiment ofthe invention. Furthermore, the particular features, structures,configurations, or characteristics may be combined in any suitablemanner in one or more embodiments.

Referring now to FIGS. 1A-1D schematic top and side-view illustrationsare provided of an active matrix display panel 100 in accordance withembodiments of the invention. In such embodiments, the underlying TFTsubstrate 102 can be similar to those in a typical AMOLED backplaneincluding working circuitry (e.g. T1, T2). Referring to FIG. 1A, panel100 may generally include a pixel area 104 including pixels 106 andsubpixels 108 arranged in a matrix, and working circuitry connected toeach subpixel for driving and switching the subpixels. The non-pixelarea generally includes a data driver circuit 110 connected to a dataline of each subpixel to enable data signals (Vdata) to be transmittedto the subpixels, a scan driver circuit 112 connected to scan lines ofthe subpixels to enable scan signals (Vscan) to be transmitted to thesubpixels, a power supply line 114 to transmit a power signal (Vdd) tothe TFTs, and a ground ring 116 to transmit a ground signal (Vss) to thearray of subpixels. As shown, the data driver circuit, scan drivercircuit, power supply line, and ground ring are all connected to aflexible circuit board (FCB) 113 which includes a power source forsupplying power to the power supply line 114 and a power source groundline electrically connected to the ground ring 116. In accordance withembodiments of the invention, each of the subpixels 108 may beindividually addressed with the corresponding underlying TFT circuitrywhile a uniform ground signal is supplied to the top of the pixel area104.

Referring now to FIGS. 1B-1D, openings 131 may be formed in theplanarization layer 122 to contact the working circuitry. Exemplaryplanarization materials include benzocyclobutene (BCB) and acrylic. Theworking circuitry can include traditional 2T1C (two transistors, onecapacitor) circuits including a switching transistor, a drivingtransistor, and a storage capacitor. It is to be appreciated that the2T1C circuitry is meant to be exemplary, and that other types ofcircuitry or modifications of the traditional 2T1C circuitry arecontemplated in accordance with embodiments of the invention. Forexample, more complicated circuits can be used to compensate for processvariations of the driver transistor and the micro LED devices, or fortheir instabilities. Furthermore, while embodiments of the invention aredescribed and illustrated with regard to top gate transistor structuresin the TFT substrate 102, embodiments of the invention also contemplatethe use of bottom gate transistor structures. Likewise, whileembodiments of the invention are described and illustrated with regardto a top emission structure, embodiments of the invention alsocontemplate the use of bottom, or both top and bottom emissionstructures. In addition, embodiments of the invention are described andillustrated below specifically with regard to a high side driveconfiguration including ground tie lines and ground ring. In a high sidedrive configuration a LED may be on the drain side of a PMOS drivertransistor or a source side of an NMOS driver transistor so that thecircuit is pushing current through the p-terminal of the LED.Embodiments of the invention are not so limited may also be practicedwith a low side drive configuration in which case the ground tie linesand ground ring become the power line in the panel and current is pulledthrough the n-terminal of the LED.

A patterned bank layer 126 including bank openings 128 is formed overthe planarization layer 122. Bank layer 126 may be formed by a varietyof techniques such as ink jet printing, screen printing, lamination,spin coating, spray coating, CVD, and PVD. Bank layer 126 may be opaque,transparent, or semi-transparent to the visible wavelength. Bank layer126 may be formed of a variety of insulating materials such as, but notlimited to, photo-definable acrylic, photoresist, silicon oxide (SiO₂),silicon nitride (SiN_(x)), poly(methyl methacrylate) (PMMA),benzocyclobutene (BCB), polyimide, acrylate, epoxy, and polyester. In anembodiment, bank player is formed of an opaque material such as a blackmatrix material. Exemplary insulating black matrix materials includeorganic resins, glass pastes, and resins or pastes including a blackpigment, metallic particles such as nickel, aluminum, molybdenum, andalloys thereof, metal oxide particles (e.g. chromium oxide), or metalnitride particles (e.g. chromium nitride).

In accordance with embodiments of the invention, the thickness of thebank layer 126 and width of the bank openings 128 described with regardto the following figures may depend upon the height of the micro LEDdevices to be mounted within the opening, height of the transfer headstransferring the micro LED devices, and resolution of the display panel.In an embodiment, the resolution, pixel density, and subpixel density ofthe display panel may account for the width of the bank openings 128.For an exemplary 55 inch television with a 40 PPI (pixels per inch) and211 subpixel pitch, the width of the bank openings 128 may be anywherefrom a few microns to 206 μm to account for an exemplary 5 μm widesurrounding bank structure between bank openings 128. For an exemplarydisplay panel with 440 PPI and a 19 μm subpixel pitch, the width of thebank openings 128 may be anywhere from a few microns to 14 μm to accountfor an exemplary 5 μm wide surrounding bank structure. Width of the bankstructure (i.e. between bank openings 128) may be any suitable size, solong as the structure supports the required processes and is scalable tothe required PPI.

Table 1 provides a list of exemplary implementations in accordance withembodiments of the invention for various red-green-blue (RGB) displayswith 1920×1080p and 2560×1600 resolutions. In the exemplary embodiments,the 40 PPI pixel density may correspond to a 55 inch 1920×1080presolution television, and the 326 and 440 PPI pixel density maycorrespond to a handheld device with RETINA® display. It is to beappreciated that embodiments of the invention are not limited to RGBcolor schemes or the 1920×1080p or 2560×1600 resolutions, and that thespecific resolution and RGB color scheme is for illustrational purposesonly.

TABLE 1 Display Pixel Sub-Pixel Pixels per Substrate Pitch (x, y) pitch(x, y) inch (PPI) Possible transfer head array pitch 55″ (634 μm, 634μm) (211 μm, 634 μm) 40 X: Multiples or fractions of 211 μm 1920 × 1080Y: Multiples or fractions of 634 μm 10″ (85 μm, 85 μm) (28 μm, 85 μm)299 X: Multiples or fractions of 28 μm 2560 × 1600 Y: Multiples orfractions of 85 μm  4″ (78 μm, 78 μm) (26 μm, 78 μm) 326 X: Multiples orfractions of 26 μm  640 × 1136 Y: Multiples or fractions of 78 μm  5″(58 μm, 58 μm) (19 μm, 58 μm) 440 X: Multiples or fractions of 19 μm1920 × 1080 Y: Multiples or fractions of 58 μm

In accordance with embodiments of the invention, the thickness of thebank layer 126 is not too thick in order for the bank structure tofunction. Thickness may be determined by the micro LED device height anda predetermined viewing angle. For example, where sidewalls of the bankopenings 128 make an angle with the planarization layer 122, shallowerangles may correlate to a wider viewing angle of the system. In anembodiment, exemplary thicknesses of the bank layer 126 may be between 1μm-50 μm. In an embodiment the thickness of the bank layer 126 is within5 μm of the thickness of the micro LED devices 400. In an embodiment,the micro LED devices 400 to be transferred are taller than the banklayer thickness.

In accordance with embodiments of the invention, a dam structure 147 isformed atop the patterned bank layer 126. The dam structure 147 may beformed from the same layer used to form the patterned bank layer 126, ormay be formed of a separate layer. In the embodiment illustrated in FIG.1B, the dam structure 147 includes a patterned dam layer 127 formed atopthe bank layer 126. Dam layer 127 may be formed of the same material asthe bank layer 126. Alternatively, dam layer 127 can be electricallyconductive. In accordance with embodiments of the invention, the damlayer is elevated above the patterned bank layer 126 a sufficient heightto accommodate a passivation layer 210, further described with regard toFIG. 5B. In an embodiment, the dam layer 127 is between 0.5 μm-5 μmthick, or more particularly 1 μm-2 μm thick, though other thicknessesare possible.

In some embodiments, a patterned conductive layer is then formed overthe patterned bank layer 126 and dam layer 127. In one embodiment thepatterned conductive layer includes reflective bank structure 142 formedwithin the bank openings 128 and in electrical contact with the workingcircuitry. For example, a reflective bank structure 142 can be formedfor each subpixel, wherein each reflective bank structure functions as abottom electrode and is independently addressable from working circuitrywithin the substrate. Accordingly, all micro LED devices that are bondedto one reflective bank structure of a subpixel are addressed together.The patterned conductive layer may also optionally include the groundtie lines 144 and/or the ground ring 116, as illustrated in FIG. 1B. Asused herein the term ground “ring” does not require a circular pattern,or a pattern that completely surrounds an object. In addition, while thefollowing embodiments are described and illustrated with regard to aground line in the form of a ground ring 116 at least partiallysurrounding the pixel area on three sides, it is to be appreciated thatembodiments of the invention can also be practiced with a ground linerunning along one side (e.g. left, right, bottom, top), or two sides (acombination of two of the left, right, bottom, top) of the pixel area.Accordingly, it is to be appreciated that in the following descriptionthe reference to and illustration of a ground ring, could potentially bereplaced with a ground line where system requirements permit.

In the embodiments illustrated an arrangement of ground tie lines 144may run between bank openings 128 in the pixel area 104 of the displaypanel 100. The ground tie lines 144 may also form a portion of the damstructure 147 and may be elevated above the reflective bank structure142. In the embodiment illustrated in FIG. 1B, dam structure 147including the dam layer 127 and ground tie line 144 runs between thebank openings 128 in the pixel area 104. Referring now to FIG. 1C, in anembodiment, a plurality of openings 149 are formed in the dam layer 127,and optionally the bank layer 126 and planarization layer 122, to exposethe plurality of ground tie lines 144. For example, the ground tie lines144 and ground ring 116 may have been formed during formation of theworking circuitry, or making contact with the working circuitry insubstrate 102. The number of openings 149 may or may not have a 1:1correlation to the number of columns (top to bottom) of bank openings128. For example, in the embodiment illustrated in FIG. 1A, a ground tieopening 149 is formed for each column of bank openings 128, however,this is not required and the number of ground tie openings 149 may bemore or less than the number of columns of bank openings 128. Likewise,the number of ground tie lines 144 may or may not have a 1:1 correlationto the number of rows (left to right) of bank openings. For example, inthe embodiment illustrated a ground tie line 144 is formed for every tworows of bank openings 128, however, this is not required and the numberof ground tie lines 144 may have a 1:1 correlation, or any 1:ncorrelation to the number (n) of rows of bank openings 128. In otherembodiments, ground tie lines can run both in the column-wise directionand row-wise direction.

In the embodiment illustrated in FIG. 1B, the reflective bank structures142, ground tie lines 144, and ground ring 116 can be formed of the sameconductive layer. In the embodiment illustrated in FIG. 1C, thereflective bank structures 142 and via contacts 145 can be formed of thesame conductive layer. As illustrated in FIG. 1C, the dam structure 147may include the dam layer 127 and via contact 145 on top of the damlayer 127, where via contact 145 is elevated above the reflective bankstructure 142. The patterned conductive layer may be formed of a numberof conductive and reflective materials, and may include more than onelayer. In an embodiment, a patterned conductive layer comprises ametallic film such as aluminum, molybdenum, titanium, titanium-tungsten,silver, or gold, or alloys thereof. The patterned conductive layer mayinclude a conductive material such as amorphous silicon, transparentconductive oxides (TCO) such as indium-tin-oxide (ITO) andindium-zinc-oxide (IZO), carbon nanotube film, or a transparentconducting polymer such as poly(3,4-ethylenedioxythiophene) (PEDOT),polyaniline, polyacetylene, polypyrrole, and polythiophene. In anembodiment, the patterned conductive layer includes a stack of aconductive material and a reflective conductive material. In anembodiment, the patterned conductive layer includes a 3-layer stackincluding top and bottom layers and a reflective middle layer whereinone or both of the top and bottom layers are transparent. In anembodiment, the patterned conductive layer includes a conductiveoxide-reflective metal-conductive oxide 3-layer stack. The conductiveoxide layers may be transparent. For example, the patterned conductivelayer may include an ITO-silver-ITO layer stack. In such aconfiguration, the top and bottom ITO layers may prevent diffusionand/or oxidation of the reflective metal (silver) layer. In anembodiment, the patterned conductive layer includes a Ti—Al—Ti stack, ora Mo—Al—Mo-ITO stack. In an embodiment, the patterned conductive layerincludes an ITO-Ti—Al—Ti-ITO stack. In an embodiment, the patternedconductive layer is 1 μm or less in thickness. The patterned conductivelayer may be deposited using a suitable technique such as, but notlimited to, PVD.

The ground tie lines 144 and/or ground ring 116 can also be formed of adifferent conductive layer than the reflective bank structure 142.Referring now to FIG. 1D, in an embodiment the ground tie line 144 isthe dam structure 147. In such an embodiment, the ground tie line 144can be formed separately from the reflective bank structure 142, andground ring 116. As illustrated, the ground tie line 144 is thicker thanthe reflective bank structure 142 and is elevated above the reflectivebank structure 142 in order to function as a dam structure for thepassivation layer to be formed. In the embodiment illustrated in FIG.1D, ground tie line 144 may be any suitable thickness to function as adam structure, such as 1-5 μm as described above with regard to damlayer 127.

Still referring to the embodiments illustrated in FIG. 1A-D, one or morebonding layers 140 may be formed on the reflective bank structure 142 tofacilitate bonding of micro LED devices. In the specific embodimentillustrated two bonding layers 140 are illustrated for bonding a pair ofmicro LED devices. In an embodiment, the bonding layer 140 is selectedfor its ability to be inter-diffused with a bonding layer on the microLED device (yet to be placed) through bonding mechanisms such aseutectic alloy bonding, transient liquid phase bonding, or solid statediffusion bonding as described in U.S. patent application Ser. No.13/749,647. In an embodiment, the bonding layer 140 has a meltingtemperature of 250° C. or lower. For example, the bonding layer 140 mayinclude a solder material such as tin (232° C.) or indium (156.7° C.),or alloys thereof. Bonding layer 140 may also be in the shape of a post.In accordance with some embodiments of the invention, taller bondinglayers 140 may provide an additional degree of freedom for systemcomponent leveling, such as planarity of the array of micro LED deviceswith the TFT substrate during the micro LED device transfer operationand for variations in height of the micro LED devices, due to the changein height of the liquefied bonding layers as they spread out over thesurface during bonding, such as during eutectic alloy bonding andtransient liquid phase bonding. The width of the bonding layers 140 maybe less than a width of a bottom surface of the micro LED devices toprevent wicking of the bonding layers 140 around the sidewalls of themicro LED devices and shorting the quantum well structures.

FIGS. 2A-2F illustrated a method of transferring a plurality of microLED devices to a plurality of reflective bank structures in accordancewith an embodiment of the invention. Referring to FIG. 2A, an array oftransfer heads 302 supported by a transfer head substrate 300 arepositioned over an array of micro LED devices 400 supported on a carriersubstrate 200. A heater and heat distribution plate may optionally beattached to the transfer head substrate 300. A heater and heatdistribution plate may optionally be attached to the carrier substrate200. The array of micro LED devices 400 are contacted with the array oftransfer heads 302, as illustrated in FIG. 2B, and picked up from thecarrier substrate 200 as illustrated in FIG. 2C. In an embodiment, thearray of micro LED devices 400 are picked up with an array of transferheads 302 operating in accordance with electrostatic principles, thatis, they are electrostatic transfer heads.

The number of micro LED devices picked up with the array of transferheads may or may not match the pitch of transfer heads. In an exemplaryembodiment, an array of transfer heads separated by a pitch of 58 μmpicks up an array of micro LED devices with a pitch of approximately6.44 μm. In this manner the transfer heads pick up every ninth micro LEDdevice for transfer to the backplane. However, it is to be understoodthat the dimensions are exemplary and embodiments of the invention arenot so limited.

Still referring to FIG. 2C, a close-up illustration is provided of anexemplary micro LED device 400. In the particular embodimentillustrated, the micro LED devices 400 include a micro p-n diode betweena bottom contact 404 and top contact 402. In an embodiment, the microp-n diode is several micros thick, such as 30 μm or less, or even 5 μmor less, with the top and bottom contacts 402, 404 being 0.1 μm-2 μmthick. The micro p-n diode may include an n-doped layer 409, a p-dopedlayer 405, and one or more quantum well layers 416 between the n-dopedlayer and p-doped layer. In the particular embodiment illustrated inFIG. 2C the n-doped layer 409 is illustrated as being above the p-dopedlayer 405. Alternatively, the p-doped layer 405 may be above the n-dopedlayer 409. The micro LED devices 400 may have straight or taperedsidewalls 406 (from top to bottom). The top and bottom contacts 402, 404may include one or more layers and can be formed of a variety ofelectrically conducting materials including metals, conductive oxides,and conductive polymers. The top and bottom contacts 402, 404 may betransparent or semi-transparent to the visible wavelength spectrum (e.g.380 nm-750 nm) or opaque. The top and bottom contacts 402, 404 mayoptionally include a reflective layer, such as a silver layer. In anembodiment, a conformal dielectric barrier layer 407 may optionally beformed along the sidewalls 406 of the p-n diode to electricallypassivate the quantum well 416, and optionally along the top or bottomsurface of the micro p-n diode. The conformal dielectric barrier layer407 may be thinner than the p-n diode so that it forms an outline of thetopography of the p-n diode it is formed on. For example, the conformaldielectric barrier layer 407 may be approximately 50-600 angstroms thickaluminum oxide. A bonding layer 410 may be formed below the bottomcontact 404 of micro LED device 400 facilitate bonding to the reflectivebank structure 142 or bonding layer 140 on the reflective bankstructure. In an embodiment, bonding layer 410 includes a material suchas gold, silver, molybdenum, aluminum, silicon, or an alloy thereof.

FIG. 2D is a cross-sectional side view illustration of a transfer head302 holding a plurality of micro LED devices 400 over a TFT substrate102 in accordance with an embodiment of the invention. In the embodimentillustrated, the transfer head 302 is supported by a transfer headsubstrate 300. As described above, a heater and heat distribution platemay optionally be attached to the transfer head substrate to apply heatto the transfer heads 302. A heater and heat distribution plate mayalso, or alternatively, optionally be used to transfer heat to thebonding layers 140 on the TFT substrate 102 and/or optional bondinglayers 410 on the micro LED devices 400. In accordance with someembodiments, the top surface of the array of micro LED devices is higherthan the top surface of the reflective bank structures so as to preventthe transfer heads from being damaged by or damaging the backplaneduring placement of the micro LED devices within bank openings.Furthermore, the top surface of the micro LED device may be elevatedhigher than the top surface of the reflective bank structure by asufficient amount to allow the passivation layer to be formed over thereflective bank structure while the micro LED device protrudes above atop surface of the passivation layer. Furthermore, the top surface ofthe dam structures 147 atop the bank layer 126 does not contact thearray of transfer heads 302 or substrate 300 supporting the transferheads 302 so as to not interference with the transfer process.

Referring now to FIG. 2E the TFT substrate 102 is contacted with thearray of micro LED devices 400. In the embodiment illustrated,contacting the TFT substrate 102 with the array of micro LED devices 400includes contacting bonding layer 140 with a micro LED device bondinglayer 410 for each respective micro LED device. In an embodiment, eachmicro LED device bonding layer 410 is wider than a corresponding bondinglayer 140. In an embodiment energy is transferred from the electrostatictransfer head assembly and through the array of micro LED devices 400 tobond the array of micro LED devices 400 to the TFT substrate 102. Forexample, thermal energy may be transferred to facilitate several typesof bonding mechanisms such as eutectic alloy bonding, transient liquidphase bonding, and solid state diffusion bonding. The transfer ofthermal energy may also be accompanied by the application of pressurefrom the electrostatic transfer head assembly.

Referring to FIG. 2F, in an embodiment, the transfer of energy liquefiesbonding layer 140. The liquefied bonding layer 140 may act as a cushionand partially compensate for system uneven leveling (e.g. nonplanarsurfaces) between the array of micro devices 400 and the TFT substrateduring bonding, and for variations in height of the micro LED devices.In the particular implementation of transient liquid phase bonding theliquefied bonding layer 140 inter-diffuses with the micro LED devicebonding layer 410 to form an inter-metallic compound layer with anambient melting temperature higher than the ambient melting temperatureof the bonding layer 140. Accordingly, transient liquid phase bondingmay be accomplished at or above the lowest liquidus temperature of thebonding layers. In some embodiments of the invention, the micro LEDdevice bonding layer 410 is formed of a material having a meltingtemperature above 250° C. such as bismuth (271.4° C.), or a meltingtemperature above 350° C. such as gold (1064° C.), copper (1084° C.),silver (962° C.), aluminum (660° C.), zinc (419.5° C.), or nickel (1453°C.), and the TFT substrate bonding layer 140 has a melting temperaturebelow 250° C. such as tin (232° C.) or indium (156.7° C.)

In this manner, the substrate supporting the TFT substrate 102 can beheated to a temperature below the melting temperature of the bondinglayer 140, and the substrate supporting the array of transfer heads isheated to a temperature below the melting temperature of bonding layer410, but above the melting temperature of bonding layer 140. In such anembodiment, the transfer of heat from the electrostatic transfer headassembly through the array of micro LED devices 400 is sufficient toform the transient liquid state of bonding layer 140 with subsequentisothermal solidification as an inter-metallic compound. While in theliquid phase, the lower melting temperature material both spreads outover the surface and diffused into a solid solution of the highermelting temperature material or dissolves the higher melting temperaturematerial and solidifies as an inter-metallic compound. In a specificembodiment, the substrate supporting the array of transfer heads is heldat 180° C., bonding layer 410 is formed of gold, and bonding layer 140is formed of indium.

Following the transfer of energy to bond the array of micro LED devices400 to the TFT substrate, the array of micro LED devices 400 arereleased onto the receiving substrate and the array of electrostatictransfer heads are moved away as illustrated in FIG. 2F. Releasing thearray of micro LED devices 400 may be accomplished with a variety ofmethods including turning off the electrostatic voltage sources,lowering the voltage across the electrostatic transfer head electrodes,changing a waveform of an AC voltage, and grounding the voltage sources.

Referring now to FIGS. 3A-3F, a sequence of transferring an array ofmicro LED devices 400 with different color emissions is illustrated inaccordance with an embodiment of the invention. In the particularconfiguration illustrated in FIG. 3A, a first transfer procedure hasbeen completed for transferring an array of red-emitting micro LEDdevices 400R from a first carrier substrate to the reflective bankstructures 142 of a TFT substrate 102. For example, where the micro LEDdevices 400R are designed to emit a red light (e.g. 620-750 nmwavelength) the micro p-n diode may include a material such as aluminumgallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), aluminumgallium indium phosphide (AlGaInP), and gallium phosphide (GaP).Referring to FIG. 3B, a second transfer procedure has been completed fortransferring a redundant array of red-emitting micro LED devices 400R.For example, the redundant array could be transferred from a differentcarrier substrate, or from a different area (e.g. from opposite side,different areas do not overlap, or random selection) of the firstcarrier substrate in order to decrease the probability of transferring asecond array from a same correlated defect area or contaminated area(e.g. particulates) of the first carrier substrate. In this manner, bytransferring from two uncorrelated areas it may be possible to reducethe likelihood of transferring two defective micro LED devices 400 tothe same reflective bank structure 142, or alternatively transferring nomicro LED devices 400 to a single reflective bank structure 142 becauseit was not possible to pick up the micro LED devices in a defective orcontaminated area of a carrier substrate. In yet another embodiment, byusing a redundant array from two different wafers it may be possible toobtain a mix of both colors, and tune the average power consumption ofthe display based upon a pre-existing knowledge of the primary emissionwavelength of the micro LED devices on different wafers. For example,where the first wafer is known to have an average red emission of 630 nmwith a first power consumption while a second wafer is known to have anaverage red emission of 610 nm with a second power consumption, theredundancy array can be composed of micro LED devices from both wafersto obtain an average power consumption or alternate color gamut.

Referring to FIG. 3C, a third transfer procedure has been completed fortransferring an array of green-emitting micro LED devices 400G from asecond carrier substrate to the TFT substrate 102. For example, wherethe micro LED devices 400G are designed to emit a green light (e.g.495-570 nm wavelength) the micro p-n diode may include a material suchas indium gallium nitride (InGaN), gallium nitride (GaN), galliumphosphide (GaP), aluminum gallium indium phosphide (AlGaInP), andaluminum gallium phosphide (AlGaP). A fourth transfer procedure fortransferring a redundant array of green-emitting micro LED devices 400Gis illustrated in FIG. 3D, similarly as before.

Referring to FIG. 3E, a fifth transfer procedure has been completed fortransferring an array of blue-emitting micro LED devices 400B from athird carrier substrate to reflective bank structures 142 of the TFTsubstrate 102. For example, where the micro LED devices 400B aredesigned to emit a blue light (e.g. 450-495 nm wavelength) the micro p-ndiode may include a material such as gallium nitride (GaN), indiumgallium nitride (InGaN), and zinc selenide (ZnSe). A sixth transferprocedure for transferring a redundant array of blue-emitting micro LEDdevices 400B is illustrated in FIG. 3F, similarly as before.

In the particular embodiments described above with regard to FIGS.3A-3F, the first and second micro LED devices 400 for each subpixel areseparately transferred. For example, this may reduce the probability ofcorrelated defects. However, in other embodiments it is possible tosimultaneously transfer the first and second micro LED devices from thesame carrier substrate. In this manner, simultaneous transfer mayincrease production throughput while still offering some of the benefitsof a redundancy scheme at the expense of the possibility of correlateddefects due to transferring micro LED devices from the same area of acarrier substrate. In such an embodiment the processing sequence wouldresemble the sequence in the following order of FIG. 3B, 3D, 3F.

While embodiments of the invention thus far have been described withregard to an arrangement of micro LED devices within reflective bankstructures with a redundancy and repair scheme, such a configuration isnot required. In an embodiment, a single micro LED device is placedwithin a reflective bank structure. In the embodiment illustrated inFIG. 4A, a redundant pair of micro LED devices 400 are placed within areflective bank structure 142. In the embodiment illustrated in FIG. 4B,a redundant pair of micro LED devices 400 are placed within a reflectivebank structure 142 with a bare repair site 401. In interests ofinclusion of many of the various possible configurations together in thesame description, the remainder of the description is made withreference to a redundancy and repair scheme.

Referring now to FIGS. 5A-5C, different sequences are illustrated fortransferring the micro LED devices to the reflective bank structures andforming the passivation layer over the reflective bank structures andaround the micro LED devices. FIG. 5A illustrates an embodiment in whichthe micro LED devices 400 are transferred to the reflective bankstructures prior to forming the passivation layer. FIG. 5B illustratesan embodiment in which the passivation layer 210 is formed over the banklayer and reflective bank structures prior to transferring the micro LEDdevices. FIG. 5C illustrates a configuration that can be formed byeither forming the passivation layer prior to transferring the micro LEDdevices, or by punching the micro LED devices through the passivationlayer. As illustrated, the passivation layer 210 may be formed over thebank layer 126 and around the sidewalls of the micro LED devices 400within the array of reflective bank structures 142. In an embodiment,where the micro LED devices 400 are vertical LED devices, thepassivation layer 210 covers and spans the quantum well structure 416.The passivation layer 210 may also cover any portions of the reflectivebank structure 142 in order to prevent possible shorting. Accordingly,the passivation layer 210 may be used to passivate the quantum wellstructure 416, as well as the reflective bank structure 142. Inaccordance with embodiments of the invention, the passivation layer 210is not formed on the top surface of the micro LED devices 400, such astop conductive contact 402, or on the top surface of the tie line 144 ofthe dam structure 147. In some embodiments, a plasma etching process,e.g. O₂, Ar, or CF₄ plasma etch, can be used after forming thepassivation layer 210 to etch back the passivation layer 210, ensuringthe top surface of the micro LED devices 400, such as top conductivecontacts 402, and the tie line 144 of the dam structure 147 are exposedto enable the top conductive electrode layers 318 to make electricalcontact with the micro LED devices 400 and tie line 144, as describedwith regard to FIG. 9. In some embodiments the micro LED devices 400 andone or more conductive lines (e.g. tie line 144 or via contact 145)protrude above a top surface 211 of the passivation layer 210 prior toand after etching. In such embodiments, etching may be used to ensureany passivation layer residues are removed from a top surface of themicro LED devices and one or more conductive lines. In other embodimentsetching reduces the thickness of the passivation layer 210 so that themicro LED devices and one or more conductive lines protrude above a topsurface 211 of the passivation layer after etching.

It is to be appreciated that the embodiments illustrated in FIGS. 5A-5Cillustrate embodiments including a pair of micro LED devices 400 bondedwithin the reflective bank structure of FIG. 1B, which includes a damstructure 147 including dam layer 127 and tie line 144. In theembodiments illustrated in FIGS. 5A-5C, the tie line 144 corresponds toa conductive line atop the bank layer 126. Embodiments of the inventionare not limited to this particular configuration. For example, a singlemicro LED device can be bonded within the reflective bank structure, ora repair micro LED device can be bonded within the reflective bankstructure. Alternative dam structures 147 can also be used, such asthose described with regard to FIGS. 1C-1D. Accordingly, the tie lines144 or via contacts 145 of the dam structures 147 can be conductivelines atop the bank layer that protrude above the passivation layer 210and are elevated above the reflective bank structure 142 as describedherein.

In accordance with embodiments of the invention, the passivation layer210 may be transparent or semi-transparent to the visible wavelength soas to not significantly degrade light extraction efficiency of thecompleted system. Passivation layer may be formed of a variety ofmaterials such as, but not limited to epoxy, acrylic (polyacrylate) suchas poly(methyl methacrylate) (PMMA), benzocyclobutene (BCB), polyimide,and polyester. In some embodiments, the passivation layer is thermosetmaterial curable using techniques such as thermal cure, UV cure, oratmospheric e-beam curing.

As previously described, the structures illustrated in FIGS. 5A-5C canbe formed in different sequences. In one embodiment, the passivationlayer is applied and leveled after transferring the micro LED devices.In another embodiment, the passivation layer is applied and leveledprior to transferring the micro LED devices. Punch-through may beaccomplished by physically driving the micro LED device 400 through thepassivation layer 210 with the transfer head 302 until contacting thereflective bank structure 142 or optional bonding layer 140 on thereceiving substrate 102. As illustrated, the micro LED device 400 may bepunched-through the passivation layer 210 so that passivation layer 210laterally surrounds the quantum well layer 416. The passivation layer210 may also be thinner than the height of the micro LED device 400 sothat electrical contact can be made with the top contact 402 of themicro LED device 400.

Punch-through may also be aided by the application of heat through thetransfer head 302 or receiving substrate 102. In an embodiment where thepassivation layer 210 is a UV curable, atmospheric e-beam curable, orthermally curable B-staged thermoset, the application of heat can meltor soften the B-staged thermoset passivation layer 210 to aid in thepunch-through. Thus, the amount of applied pressure, heat, and amount ofcross-linking in the B-staged thermoset can be controlled to achievepunch-though. Application of UV energy or atmospheric e-beam afterpunch-through can then be used to cure the thermoset passivation layer210 where the thermoset passivation layer 210 is UV curable oratmospheric e-beam curable. In an embodiment where the passivation layer210 is a thermally curable B-staged thermoset, continued application ofheat after punch-through can then be used to cure the thermosetpassivation layer 210. In an embodiment, where the passivation layer 210is a thermoplastic material the thermoplastic passivation layer 210 isheated above the Tg, and more specifically, above the Tg and below theTm of the thermoplastic material during punch-through. Thus, the amountof pressure and heat applied to the thermoplastic material can becontrolled to achieve punch-though.

In certain embodiments, the application of heat during punch-through canalso result in reflowing of one or both of the optional bonding layers410, 140 or diffusion between layers to assist with bonding. Inaddition, reflowing of any of the bonding layers 410, 140 can result informing a new bonding layer with a higher melting temperature. In oneembodiment, the application of heat not only aids with punch-through oflayer 210, the application of heat also causes at least partial reflowand solidification of the bonding layers(s) 410, 140. For example, theapplication of heat can lead to the formation of an alloy having ahigher Tm than that of the reflowed or diffused layer(s).

In an embodiment, the punch-through and release of the micro devices onthe receiving substrate is performed in ten seconds or less, or moreparticularly one second or less. Where heat is applied, it is possibleto rapidly reflow either of the optional bonding layer(s) 410, 140 toassist in bonding and to soften or initially melt the passivation layer210, which can be a thermal, atmospheric e-beam, or UV curable B-stagedthermoset, or a thermoplastic. Following the release of the array ofmicro devices from the array of transfer heads, the passivation layer210 is hardened to secure the array of micro devices within thereflective bank structures. Where the passivation layer 210 is athermoplastic, hardening is effected by allowing the thermoplasticmaterial to cool. Where the passivation layer 210 is a B-stagedthermoset, the passivation layer can be final cured through theapplication of UV energy, atmospheric e-beam, or heat for an order ofminutes or hours to effect curing. In an embodiment, heat can be appliedfrom below the receiving substrate 102 with heater and/or heatdistribution plate. Heat can also be applied from above the receivingsubstrate 102. UV energy can also be applied from above or below thereceiving substrate. In an embodiment, the receiving substrate istransferred to a curing chamber to effect curing following the releaseof the array of micro LED devices.

Referring now to FIGS. 6A-6C, embodiments are illustrated in which apassivation layer 210 is applied to the substrate 102 with an applicator610 followed by being leveled with a leveler 620 to provide asubstantially flat top surface 211 of the passivation layer across theentire area that the passivation layer covers. For example, referringback to FIG. 3F, in an embodiment the passivation layer 210 can beformed over all of the subpixels 108 in the pixel area 104. In anembodiment, the passivation layer covers all of the subpixels 108 in thepixel area and the ground tie lines 144. In an embodiment, thepassivation layer covers all of the subpixels 108 in the pixel area andthe via contacts 145. A variety of configurations are possible,including covering the ground ring 116. In an embodiment, as theapplicator 610 and leveler 620 are drawn over the substrate 102 theleveler 620 is used to form a flat top surface 211 of the passivationlayer 210 above which a portion of the micro LED devices 400 andelectrical lines protrude, illustrated as ground lines 144 in FIG. 6A,and via lines 145 in FIG. 6B. In other embodiments, the leveler forms aflat top surface 211 of the passivation layer 210 above the micro LEDdevices 400 and electrical lines, so that the micro LED devices 400 andelectrical lines do not protrude above the top surface of thepassivation layer, as illustrated in FIG. 6C. In such an embodiment, thepassivation layer may be subsequently etched back to expose the microLED devices and electrical lines.

The applicator 610 may assume alternative configurations based onalternative coating methods. For example, the applicator 610 may be aroller for a roller coating application. The applicator may be a nozzlefor a slit coating application. Depending upon the size of the substrate102, roller application or slit coating may be useful for applying wideline widths possible of covering the entire pixel area in a singleapplication. Other application methods are also envisioned includingspin coating, spray coating, screen printing, and ink jet printing. Theleveler 620 may also assume alternative configurations based onalternative coating methods. For example, the leveler 620 may be aroller, squeegee, or blade.

FIGS. 7A-7B are side-view illustrations of etching passivation layerresidues from the micro LED devices and conductive line atop a banklayer in accordance with an embodiment of the invention. As shown in theembodiment illustrated in FIG. 7A the passivation layer 210 includes asubstantially flat top surface 211. The micro LED devices 400 andconductive line illustrated as the tie line 144 protrude above the topsurface 211. In the particular embodiment illustrated passivation layer210 residues 213 may at least partially cover the top surfaces of themicro LED devices 400 and/or conductive line illustrates as tie line144. In the embodiment illustrated in FIG. 7B, a plasma etching process,e.g. O₂, Ar, or CF₄ plasma etch, can be used after forming thepassivation layer 210 to remove the residues 213 ensuring the topsurface of the micro LED devices 400, such as top conductive contacts402, and the tie line 144 of the dam structure 147 are exposed to enablethe top conductive electrode layers 318 to make electrical contact withthe micro LED devices 400 and tie line 144, as described with regard toFIG. 9.

FIGS. 8A-8B are side-view illustrations of etching a passivation layerso that a portion of the micro LED devices and a conductive line atop abank layer protrude above a top surface of the passivation layer inaccordance with an embodiment of the invention. As shown in theembodiment illustrated in FIG. 8A the passivation layer 210 includes asubstantially flat top surface 211 that is above the micro LED devices400 and/or the conductive line illustrated as tie line 144. In anembodiment, the top surface of the conductive line illustrated as tieline 144 is used to set the elevation of the top surface 211 of thepassivation layer 210 during application and leveling of the passivationlayer. In the embodiment illustrated in FIG. 8B, a plasma etchingprocess, e.g. O₂, Ar, or CF₄ plasma etch, can be used to thin thepassivation layer 210 so that the top surface of the micro LED devices400, such as top conductive contacts 402, and the tie line 144 of thedam structure 147 are exposed and protrude above the top surface 211 ofthe passivation layer 210.

Referring now to FIG. 9, in embodiments including vertical micro LEDdevice pairs, following the formation, curing, and etching ofpassivation layer 210, a top electrode layer 318 is formed on the microLED device 400 pairs and in electrical contact with the conductive lines(e.g. 144, 145) and ground ring 116. Depending upon the particularapplication, top electrode layer 318 may be opaque, reflective,transparent, or semi-transparent to the visible wavelength. Exemplarytransparent conductive materials include amorphous silicon, transparentconductive oxides (TCO) such as indium-tin-oxide (ITO) andindium-zinc-oxide (IZO), carbon nanotube film, or a transparentconductive polymer such as poly(3,4-ethylenedioxythiophene) (PEDOT),polyaniline, polyacetylene, polypyrrole, and polythiophene. In anembodiment top electrode layer 318 is approximately 50 nm-1 μm thickITO-silver-ITO stack, with the silver layer thin enough to betransparent to the visible wavelength spectrum. In a particularembodiment, the top electrode layer 318 is formed by ink jet printing.In an embodiment top electrode layer 318 is approximately 50 nm-1 μmthick PEDOT. Other methods of formation may include chemical vapordeposition (CVD), physical vapor deposition (PVD), spray coating, orspin coating depending upon the desired area to be coated and anythermal constraints.

In accordance with embodiments of the present invention, one or more topelectrode layers 318 may be used to electrically connect the micro LEDdevice 400 pairs from the array of subpixels to ground line 144. Avariety of configurations are possible with different redundancy andrepair configurations. In interest of clarity, FIG. 9 is limited to anexemplary top electrode layer 318 configuration within a singlesubpixel, while a more detailed description is provided with regard toFIGS. 11-13 for the pixel arrangement in on a display substrate.

In the embodiment illustrated in FIG. 9, a single top electrode layer318 is illustrated as connecting both micro LED devices 400 of the pairto tie line 144. For example, such a configuration may be used when bothmicro LED devices 400 have been determined to be transferred to thedisplay substrate and not be defective or contaminated. Following theformation of the top electrode a cover 500 can be formed over theexemplary structure. In the exemplary embodiment illustrated in FIG. 10,cover layer is conformal to the topography of the micro LED devices 400and overall structure over substrate 102. Cover layer 500 may functionto provide both chemical passivation and physical protection to theunderlying structure. Cover layer 500 may also be flexible, and may betransparent. Cover layer 500 may be formed of a variety of materialssuch as, but not limited to, silicon oxide (SiO₂), silicon nitride(SiN_(x)), poly(methyl methacrylate) (PMMA), benzocyclobutene (BCB),polyimide, and polyester.

FIG. 11 illustrates an alternative embodiment in which a dam structurehas not been formed. In the embodiment illustrated in FIG. 11, apassivation layer 210 can be formed similarly as described above, andmay be leveled. Following formation of the passivation layer 210,portions of the passivation layer can be etched, for example, usinglithographic techniques to expose the micro LED devices 400 andconductive lines (e.g. 144, 145), followed by formation of top electrode318 and cover 500. In such an embodiment etching may be a timed etch soas to not expose the quantum well structures within the micro LEDdevices.

FIG. 12A is a top view illustration of the active matrix display panelin which a black matrix material 502 is formed between subpixels inaccordance with an embodiment of the invention. In an embodiment, theblack matrix 502 is formed prior to applying the cover 500. Black matrix502 can be formed from a method that is appropriate based upon thematerial used. For example, black matrix 502 can be applied using inkjet printing, sputter and etching, spin coating with lift-off, or aprinting method. Exemplary black matrix materials include carbon, metalfilms (e.g. nickel, aluminum, molybdenum, and alloys thereof), metaloxide films (e.g. chromium oxide), and metal nitride films (e.g.chromium nitride), organic resins, glass pastes, and resins or pastesincluding a black pigment or silver particles.

In addition to being a conformal layer, cover 500 can be a separatecover plate that may be attached to the substrate by an adhesive, forexample. FIG. 12B is a schematic side view illustration of theapplication of a black matrix material before forming a cover plate overthe display panel substrate in accordance with an embodiment of theinvention. FIG. 12C is a schematic side view illustration of theapplication of a black matrix material with a cover plate over thedisplay panel substrate in accordance with an embodiment of theinvention.

FIG. 13A is a top schematic view illustration of an array of micro LEDdevices including a variety of redundancy and repair configurationsdescribed in accordance with embodiments of the invention. In theparticular embodiments illustrated in FIG. 13A, a top electrode layer318 is formed over a plurality of bank openings 128, and may be formedover a plurality of subpixels or pixels 106. In an embodiment, the topelectrode layer 318 is formed over all of the micro LED devices 400 inthe pixel area. FIG. 13A illustrates various possible configurations.One configuration in the labeled pixels 106 includes those in which therepair micro LED sites 401 are open, and repair micro LED devices havenot been transferred. FIG. 13A also illustrates configurations in whichrepair micro LED devices 400 have been transferred when defective orcontaminated micro LED devices 400X are detected, or missing micro LEDdevices are detected, evidenced by bonding layers 140 at a micro LEDdevice bonding site.

FIG. 13B is a top schematic view illustration of a plurality of separatetop electrode layers 318 formed over an array of micro LED devicesincluding a variety of configurations in accordance with an embodimentof the invention. The embodiments illustrated in FIG. 13B differ fromthose illustrated in FIG. 13A particularly in formation of a pluralityof separate top electrode layers 318. In one embodiment, such as thoseillustrated in the labeled pixel 106 where a micro LED device 400 is notplaced on the repair bonding site 401, it is not required for the topelectrode layers 318 to be formed thereon. Accordingly, the length ofthe top electrode layer 318 can be determined based upon whether or nota replacement micro LED device is added. The top electrode layer 318 mayalso be formed over the bonding site 401.

In some embodiments, the top electrode layers 318 are formed by ink jetprinting or screen printing. Ink jet printing in particular may besuitable since it is a non-contact printing method. Conventional AMOLEDbackplane processing sequences typically blanket deposit the topelectrode layer in a deposition chamber followed by singulation of theindividual backplanes from a larger substrate. In accordance withembodiments of the invention, a display substrate 102 can be singulatedfrom a larger substrate prior to transferring the array of micro LEDdevices. In an embodiment ink jet printing or screen printing provides apractical approach for patterning the individual top electrode layerswithout requiring a separate mask layer for each particularconfiguration in the redundancy and repair scheme. Line width can alsovary for the top electrode layers 318 depending upon application. Forexample, the line width may approach that of the subpixel area.Alternatively, the line width may be minimal. For example, line widthsas low as approximately 15 microns may be accomplished with commerciallyavailable ink jet printers, and line widths as low as approximately 30microns may be accomplished with commercially available screen printers.Accordingly, the line width may be more or less than the maximum widthof the micro LED devices.

FIG. 13C is a top schematic view illustration of a plurality of separatetop electrode layers formed over an array of micro LED devices includinga variety of configurations in accordance with an embodiment of theinvention. In the particular embodiments illustrated in FIG. 13C, thearrangements of micro LED devices 400 are the same as those describedabove with regard to FIGS. 13A-13B. The embodiments illustrated in FIG.13C differ from those illustrated in FIG. 13B particularly in formationof the top electrode layers 318. The embodiments illustrated in FIG. 13Bwere shown as altering the length of the top electrode layers 318, whilethe embodiments illustrated in FIG. 13C are shown as altering the pathof the top electrode layers 318, and/or number of top electrode layers318.

The formation of separate top electrode layer(s) 318 may provide anadditional benefit during electrical testing of the display substrate102 after formation of the top electrode layer(s) 318. For example,prior to formation of the top electrode layer 318 it may not have beenpossible to detect certain defects resulting in shorting of a micro LEDdevice 4005. The implication of a shorted micro LED device 400S couldresult in a dark subpixel in which all of the current flows through theshorted micro LED devices 400S rather than any of the other micro LEDdevices in the subpixel. In the embodiment illustrated in FIG. 14 thetop electrode layer 318 connected to a shorted micro LED device 400S iscut using a suitable technique such as laser scribing. In this manner,electrical shorts that could not have been or were not detected duringthe integrated testing method previously described could potentially bedetected during an electrical test with the application of electricalcurrent through the display after formation of the top electrode layer318. In such an embodiment, if a micro LED device 400S is shorted, thetop electrode layer 318 connected to the micro LED device 400S can becut, allowing the redundant and/or repair micro LED device to providethe emission from the subpixel.

FIG. 15 illustrates a display system 1500 in accordance with anembodiment. The display system houses a processor 1510, data receiver1520, a display 1530, and one or more display driver ICs 1540, which maybe scan driver ICs and data driver ICs. The data receiver 1520 may beconfigured to receive data wirelessly or wired. Wireless may beimplemented in any of a number of wireless standards or protocolsincluding, but not limited to, Wi-Fi (IEEE 802.11 family), WiMAX (IEEE802.16 family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+,HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth,derivatives thereof, as well as any other wireless protocols that aredesignated as 3G, 4G, 5G, and beyond. The one or more display driver ICs1540 may be physically and electrically coupled to the display 1530.

In some embodiments, the display 1530 includes one or more micro LEDdevices 400 that are formed in accordance with embodiments of theinvention described above. For example, the display 1530 may include aplurality of micro LED devices, dam structure, and passivation layer asdescribed above.

Depending on its applications, the display system 1500 may include othercomponents. These other components include, but are not limited to,memory, a touch-screen controller, and a battery. In variousimplementations, the display system 1500 may be a television, tablet,phone, laptop, computer monitor, kiosk, digital camera, handheld gameconsole, media display, ebook display, or large area signage display.

FIG. 16 illustrates a lighting system 1600 in accordance with anembodiment. The lighting system houses a power supply 1610, which mayinclude a receiving interface 1620 for receiving power, and a powercontrol unit 1630 for controlling power to be supplied to the lightsource 1640. Power may be supplied from outside the lighting system 1600or from a battery optionally included in the lighting system 1600. Insome embodiments, the light source 1640 includes one or more micro LEDdevices 400 that are formed in accordance with embodiments of theinvention described above. For example, the light source 1640 mayinclude a plurality of micro LED devices, dam structure, and passivationlayer as described above. In various implementations, the lightingsystem 1600 may be interior or exterior lighting applications, such asbillboard lighting, building lighting, street lighting, light bulbs, andlamps.

In utilizing the various aspects of this invention, it would becomeapparent to one skilled in the art that combinations or variations ofthe above embodiments are possible for integrating a plurality of microLED devices into a corresponding plurality of reflective bank structuresof a light emitting device. Although the present invention has beendescribed in language specific to structural features and/ormethodological acts, it is to be understood that the invention definedin the appended claims is not necessarily limited to the specificfeatures or acts described. The specific features and acts disclosed areinstead to be understood as particularly graceful implementations of theclaimed invention useful for illustrating the present invention.

1. (canceled)
 2. A display panel pixel structure comprising: a substrateincluding: a power line; a planarization layer over the power line; aplurality of bottom electrodes over the planarization layer; and acorresponding plurality of thin film driving transistors connected tothe plurality of bottom electrodes; a corresponding plurality of lightemitting diode (LEDs) bonded to the plurality of bottom electrodeswithin a pixel area of the display panel; a patterned conductive layerover the planarization layer, wherein the patterned conductive layer isin electrical contact the power line; and a top conductive electrodelayer that electrically connects the plurality of LEDs with thepatterned conductive layer.
 3. The display panel of claim 2, wherein thepower line is a Vss line.
 4. The display panel of claim 2, furthercomprising a passivation layer over the substrate and laterally aroundthe plurality of LEDs, wherein the top conductive electrode layer isover the passivation layer.
 5. The display panel of claim 4, wherein thepassivation layer comprises a thermoset material.
 6. The display panelof claim 5, wherein the thermoset material is an acrylic.
 7. The displaypanel of claim 4, wherein each LED comprises a vertical p-n diodebetween a bottom contact and a top contact.
 8. The display panel ofclaim 7, wherein each LED is bonded to a corresponding bottom electrodewith a solder material.
 9. The display panel of claim 7, wherein eachLED has a maximum width of 1 to 100 μm.
 10. The display panel of claim7, wherein each LED has a maximum width of 1 to 20 μm.
 11. The displaypanel of claim 7, wherein each LED has a maximum width of 1 to 10 μm.12. The display panel of claim 4, further comprising a correspondingplurality of thin film switching transistors connected with theplurality of thin film driving transistors.
 13. The display panel ofclaim 12, further comprising a corresponding plurality of storagecapacitors connected with the plurality of thin film switchingtransistors.
 14. The display panel of claim 4, further comprising apatterned dam layer over the planarization layer, and the patternedconductive layer is on top of the patterned dam layer.
 15. The displaypanel of claim 14, wherein the patterned conductive layer spans along anopening of the patterned dam layer
 16. The display panel of claim 14,wherein a top surface of the passivation layer is below of top surfaceof each LED and a top surface of the patterned dam layer.
 17. Thedisplay panel of claim 4, wherein the patterned conductive layer spansalong an opening in the passivation layer.
 18. The display panel ofclaim 8: wherein the substrate includes: a second power line, whereinthe planarization layer is over the second power line; a secondplurality of bottom electrodes over the planarization layer; and acorresponding second plurality of thin film driving transistorsconnected to the second plurality of bottom electrodes: a correspondingsecond plurality of LEDs bonded to the second plurality of bottomelectrodes within the pixel area of the display panel; a secondpatterned conductive layer over the planarization layer, wherein thesecond patterned conductive layer is in electrical contact the secondpower line; and a second top conductive electrode layer thatelectrically connects the second plurality of LEDs with the secondpatterned conductive layer.
 19. The display panel of claim 18, whereinthe passivation layer is laterally around the second plurality of LEDs,wherein the second top conductive electrode layer is over thepassivation layer.
 20. The display panel of claim 19, wherein: thepatterned conductive layer spans along an opening in the passivationlayer; and the second patterned conductive layer spans along a secondopening in the passivation layer.
 21. The display panel of claim 19,further comprising: a patterned dam layer over the planarization layer,and the patterned conductive layer is on top of the patterned dam layer;and a second patterned dam layer over the planarization layer, and thesecond patterned conductive layer is on top of the patterned dam layer.